Catalog
NPN Epitaxial Silicon Transistor
Key Features
• Collector-Emitter Voltage : VCEO=160V
• Current Gain Bandwidth Productor : fT=120MHz
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NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
| Part | Power - Max [Max] | Operating Temperature | Package / Case | Current - Collector (Ic) (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Mounting Type | Vce Saturation (Max) @ Ib, Ic | Transistor Type | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 630 mW | 150 °C | SOT-23-6 Thin TSOT-23-6 | 800 mA | 100 nA | Surface Mount | 1 V | NPN | SuperSOT™-6 | 160 V | 120 MHz | 80 |