FMB3906 Series

Dual NPN 40 V, 200 mA General Purpose Bipolar Junction Transistor

Catalog

Dual NPN 40 V, 200 mA General Purpose Bipolar Junction Transistor

Part	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector (Ic) (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Frequency - Transition	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor FMB3906	400 mV	SOT-23-6 Thin TSOT-23-6	200 mA	2 PNP (Dual)	40 V	Surface Mount	-55 °C	150 °C	700 mW	200 MHz	SuperSOT™-6	100
ON Semiconductor FMB3904	300 mV	SOT-23-6 Thin TSOT-23-6	200 mA	2 NPN (Dual)	40 V	Surface Mount	-55 °C	150 °C	700 mW	250 MHz	SuperSOT™-6	100

Catalog

Dual NPN 40 V, 200 mA General Purpose Bipolar Junction Transistor

Description

Dual NPN 40 V, 200 mA General Purpose Bipolar Junction Transistor. This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.