| Transistors | 1 | Obsolete | |
FCP260N60EPower MOSFET, N-Channel, SUPERFET<sup>® </sup>II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220 | Single FETs, MOSFETs | 2 | Active | SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. |
FCP290N80Power MOSFET, N-Channel, SUPERFET<sup>®</sup> II, 800 V, 17 A, 290 mΩ, TO-220 | Single FETs, MOSFETs | 1 | Obsolete | SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. |
FCP360N65S3R0Power MOSFET, N-Channel, SUPERFET<sup>®</sup> III, Easy Drive, 650 V, 10 A, 360 mΩ, TO-220 | Discrete Semiconductor Products | 1 | NRND | SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. |
FCP36N60NPower MOSFET, N-Channel, SUPREMOS<sup>®</sup>, FAST, 600 V, 36 A, 90 mΩ, TO-220 | Single FETs, MOSFETs | 1 | Obsolete | The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. |
FCP380N60EPower MOSFET, N-Channel, SUPERFET<sup>® </sup>II, Easy Drive, 600V, 10.2A, 380mΩ, TO-220 | Single | 3 | Active | SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. |
FCP600N60ZPower MOSFET, N-Channel, SUPERFET<sup>® </sup>II, FAST, 600 V, 7.4 A, 600 mΩ | Single FETs, MOSFETs | 2 | Active | SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. |
FCP650N80ZPower MOSFET, N-Channel, SUPERFET<sup>®</sup> II, 800 V, 10 A, 650 mΩ, TO-220 | FETs, MOSFETs | 1 | Obsolete | SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Inaddition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET IIMOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power andindustrial power applications. |
| Discrete Semiconductor Products | 1 | Obsolete | |
FCP9N60NPower MOSFET, N-Channel, SUPREMOS<sup>®</sup>, FAST, 600 V, 9 A, 385 mΩ, TO-220 | Single FETs, MOSFETs | 2 | Obsolete | The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. |