FCP360N65S3R0 Series

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, TO-220

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, TO-220

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Technology	FET Type	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FCP360N65S3R0	Through Hole	18 nC	83 W	MOSFET (Metal Oxide)	N-Channel	4.5 V	TO-220-3	TO-220-3	30 V	-55 °C	150 °C	10 A	360 mOhm	10 V	650 V	730 pF

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, TO-220

Key Features

• 700 V @ TJ= 150 °C

• Low Effective Output Capacitance (Typ. Coss(eff.)= 173 pF)

• Ultra Low Gate Charge (Typ. Qg= 18 nC)

• Optimized Capacitance

• 100% Avalanche Tested

• RoHS Compliant

• Typ. RDS(on)= 310 mΩ

• Internal Gate Resistance: 1 Ω

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.