FCP9N60N Series

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, TO-220

Catalog

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, TO-220

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Vgs (Max)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Rds On (Max) @ Id, Vgs
ON Semiconductor FCP9N60N	TO-220-3	-55 °C	150 °C	N-Channel	Through Hole	30 V	83.3 W	29 nC	4 V	9 A	600 V	10 V	1240 pF	MOSFET (Metal Oxide)	TO-220-3	385 mOhm
ON Semiconductor FCP9N60N-F102	TO-220F	-55 °C	150 °C	N-Channel	Through Hole	30 V	83.3 W	29 nC	4 V	9 A	600 V	10 V	1240 pF	MOSFET (Metal Oxide)	TO-220-3 Full Pack	385 mOhm

Catalog

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, TO-220

Key Features

• RDS(on)= 330mΩ ( Typ.) @ VGS= 10V, ID= 4.5A

• Ultra low gate charge ( Typ. Qg= 22nC )

• Low effective output capacitance ( Typ. Coss.eff = 106pF )

• 100% avalanche tested

• RoHS compliant

Description

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.