FCP600N60Z Series

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package
ON Semiconductor FCP600N60Z	3.5 V	20 V	TO-220-3	26 nC	1120 pF	Through Hole	7.4 A	600 mOhm	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	600 V	TO-220-3
ON Semiconductor FCP600N60Z	3.5 V	20 V	TO-220-3	26 nC	1120 pF	Through Hole	7.4 A	600 mOhm	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	600 V	TO-220-3

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ

Key Features

• 650 V at TJ= 150°C

• Max. RDS(on)= 600 mΩ

• Ultra Low Gate Charge ( Typ. Qg= 20 nC )

• Low Effective Output Capacitance ( Typ. Coss.eff = 74 pF )

• 100% Avalanche Tested

• ESD Improved Capacity

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.