FCP380N60E Series

Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600V, 10.2A, 380mΩ, TO-220

Catalog

Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600V, 10.2A, 380mΩ, TO-220

Part	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FCP380N60	106 W	-55 °C	150 °C	MOSFET (Metal Oxide)	600 V	1665 pF	3.5 V	10.2 A	20 V	380 mOhm	Through Hole	TO-220-3	N-Channel	TO-220-3	10 V	40 nC
ON Semiconductor FCP380N60E	106 W	-55 °C	150 °C	MOSFET (Metal Oxide)	600 V	1770 pF	3.5 V	10.2 A	20 V	380 mOhm	Through Hole	TO-220-3	N-Channel	TO-220-3	10 V	45 nC
ON Semiconductor FCP380N60E	106 W	-55 °C	150 °C	MOSFET (Metal Oxide)	600 V	1770 pF	3.5 V	10.2 A	20 V	380 mOhm	Through Hole	TO-220-3	N-Channel	TO-220-3	10 V	45 nC

Catalog

Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600V, 10.2A, 380mΩ, TO-220

Key Features

• 650V @TJ= 150°C

• Max. RDS(on)= 380mΩ

• Ultra low gate charge ( Typ. Qg= 34nC )

• Low effective output capacitance ( Typ. Coss.eff = 97pF )

• 100% avalanche tested

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.