O
ON Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
⌘K
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
FCB20N60Power MOSFET, N-Channel, SUPERFET<sup>®</sup>, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK | Discrete Semiconductor Products | 1 | NRND | SuperFET®MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. |
FCB260N65S3Power MOSFET, N-Channel, SUPERFET<sup>®</sup> III, Easy Drive, 650 V, 12 A, 260 mΩ, D2PAK | Single FETs, MOSFETs | 1 | NRND | SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. |
FCB290N80Power MOSFET, N-Channel, SUPERFET<sup>®</sup> II, 800 V, 17 A, 290 mΩ, D2PAK | Transistors | 1 | NRND | SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. |
FCB36N60NPower MOSFET, N-Channel, SUPREMOS<sup>®</sup>, FAST, 600V, 25A, 125mΩ, D2PAK | FETs, MOSFETs | 1 | Obsolete | The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. |
FCBS0550Intelligent Power Module (IPM), Motion Control | Discrete Semiconductor Products | 2 | Obsolete | FSBS3CH60 is a power module for motion control, developed to provide a very compact and high performance inverter solution for AC motor drives in low-power applications such as air conditioners and washing machines. It combines optimized circuit protections and drives matched to low-loss IGBTs. The system reliability is further enhanced by the integrated under-voltage lock-out and over-current protection. The high speed built-in HVIC provides optocoupler- less single-supply IGBT gate driving capability that further reduces the overall size of the inverter system. Each phase leg current of the inverter can be monitored thanks to three separate negative dc terminals. |
FCD1300N80ZPower MOSFET, N-Channel, SUPERFET<sup>®</sup> II, 800 V, 4 A, 1.3 Ω, DPAK | Transistors | 1 | NRND | SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications. |
FCD2250N80ZPower MOSFET, N-Channel, SUPERFET<sup>®</sup> II, 800 V, 2.6 A, 2.25 Ω, DPAK | Transistors | 1 | NRND | SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications. |
FCD260N65S3Power MOSFET, N-Channel, SUPERFET<sup>®</sup> III, Easy Drive, 650 V, 12 A, 260 mΩ, DPAK | Discrete Semiconductor Products | 1 | NRND | SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. |
FCD3400N80ZPower MOSFET, N-Channel, SUPERFET<sup>®</sup> II, 800 V, 2 A, 3.4 Ω, DPAK | Single FETs, MOSFETs | 1 | NRND | SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications. |
FCD360N65S3R0Power MOSFET, N-Channel, SUPERFET<sup>®</sup> III, Easy Drive, 650 V, 10 A, 360 mΩ, DPAK | FETs, MOSFETs | 1 | NRND | SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. |
| Part | Category | Description |
|---|---|---|
 ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
 ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
 ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
 ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
 ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
 ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
 ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
 ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |