FCB20N60 Series

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK

Catalog

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Supplier Device Package
ON Semiconductor FCB20N60TM	5 V	190 mOhm	30 V	N-Channel	10 V	208 W	3080 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	20 A	600 V	98 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)

Catalog

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK

Key Features

• 650V @TJ= 150°C

• Typ. RDS(on)= 150mΩ

• Ultra low gate charge ( Typ. Qg= 75nC )

• Low effective output capacitance ( Typ. Coss.eff = 165pF )

• 100% avalanche tested

• RoHS compliant

Description

SuperFET®MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.