FCB290N80 Series

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 17 A, 290 mΩ, D2PAK

Catalog

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 17 A, 290 mΩ, D2PAK

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Vgs (Max)	Technology	Package / Case
ON Semiconductor FCB290N80	N-Channel	17 A	-55 °C	150 °C	3205 pF	TO-263 (D2PAK)	75 nC	Surface Mount	10 V	800 V	290 mOhm	4.5 V	212 W	20 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Catalog

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 17 A, 290 mΩ, D2PAK

Key Features

• RDS(on)= 0.259 Ω (Typ.)

• Ultra Low Gate Charge (Typ. Qg= 58 nC)

• Low Eoss(Typ. 5.4 uJ @ 400V)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 240 pF)

• 100% Avalanche Tested

• RoHS Compliant

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.