FCD3400N80Z Series

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 2 A, 3.4 Ω, DPAK

Catalog

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 2 A, 3.4 Ω, DPAK

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Vgs (Max)
ON Semiconductor FCD3400N80Z	32 W	800 V	10 V	-55 °C	150 °C	400 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	9.6 nC	MOSFET (Metal Oxide)	TO-252AA	4.5 V	3.4 Ohm	2 A	N-Channel	Surface Mount	20 V

Catalog

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 2 A, 3.4 Ω, DPAK

Key Features

• RDS(on)= 2.75 Ω (Typ.)

• Ultra Low Gate Charge (Typ. Qg= 7.4 nC)

• Low Eoss(Typ. 0.9 uJ @ 400V)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 41 pF)

• 100% Avalanche Tested

• RoHS Compliant

• ESD Improved Capability

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.