NVH4L160N120SC1 Series

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drain to Source Voltage (Vdss)	Qualification	Grade	Vgs (Max) [Min]	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case
ON Semiconductor NVH4L160N120SC1	111 W	34 nC	N-Channel	1200 V	AEC-Q101	Automotive	-15 V	25 V	224 mOhm	Through Hole	665 pF	-55 °C	175 ░C	4.3 V	TO-247-4L	TO-247-4

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L

Key Features

• High Junction Temperature

• 1200V

• High UIS, Surge Current, and Avalanche

• Qualified for Automotive

Description

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.