NVH4L070N120M3S Series

Silicon Carbide (SiC) MOSFET- EliteSiC, 65 mohm, 1200 V, M3S, TO247-4L

Catalog

Silicon Carbide (SiC) MOSFET- EliteSiC, 65 mohm, 1200 V, M3S, TO247-4L

Part	Qualification	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Technology	Grade	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Min]	Vgs (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
ON Semiconductor NVH4L070N120M3S	AEC-Q101	87 mOhm	Through Hole	4.4 V	SiC (Silicon Carbide Junction Transistor)	Automotive	1200 V	18 V	TO-247-4	57 nC	N-Channel	34 A	-10 V	22 V	-55 °C	175 ░C	1230 pF	TO-247-4L

Catalog

Silicon Carbide (SiC) MOSFET- EliteSiC, 65 mohm, 1200 V, M3S, TO247-4L

Key Features

• Typical RDS(on) = 65mΩ at Vgs =18V, Id = 15A

• Qualified for Automotive According to AEC−Q101

• New M3S technology: 65mohm RDS(ON) with low EON and EOFF losses

• Devices are Pb−Free and are RoHS Compliant

• 15V to 18V Gate Drive

Description

EliteSiC MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.