PSMNR70-40YSNN-channel 40 V, 0.81 mOhm, ASFET for Battery System in LFPAK56E | Single FETs, MOSFETs | 1 | Active | ASFET for Battery System applications, characterized by low RDSonand strong SOA capability for reduced I²R conduction losses. ASFETs deliver high efficiency, reduced heat generation and superior handling of inrush current during transient and fault conditions. |
| Discrete Semiconductor Products | 1 | Active | |
PSMNR89N-channel 25 V, 0.98 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Discrete Semiconductor Products | 1 | Active | N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSonand strong safe operating area, optimized for hot-swap, inrush and linear-mode applications. |
PSMNR90N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology | Transistors | 3 | Active | 300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. |
PSMNR90-40YSNN-channel 40 V, 0.97 mOhm, ASFET for Battery System in LFPAK56E | Transistors | 1 | Active | ASFET for Battery System applications, characterized by low RDSonand strong SOA capability for reduced I2R conduction losses. ASFETs deliver high efficiency, reduced heat generation and superior handling of inrush current during transient and fault conditions. |
PSMNR90-50SLHN-channel 50 V, 0.90 mOhm, 410 A logic level Application Specific MOSFET in LFPAK88 | FETs, MOSFETs | 1 | Active | 410 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique "SchottkyPlus" technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe and reliable switching at high load-current. |
PSMNR90-80ASEN-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | Single FETs, MOSFETs | 1 | Active | N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMNR90-80ASE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212). |
PSMNR90-80ASFNextPower 80 V, 0.85 mOhm, N-channel MOSFET in CCPAK1212 package | Single FETs, MOSFETs | 1 | Active | NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. |
PSMNR90-80CSFNextPower 80 V, 0.9 mOhm, N-channel MOSFET in CCPAK1212i package | Single FETs, MOSFETs | 1 | Active | NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. |
| Transistors | 1 | Active | |
