PSMN9R5-30YLCN-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK using NextPower technology | Transistors | 1 | Active | Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
PSMN9R8-100YSFNextPower 100 V, 10.2 mOhm N-channel MOSFET in LFPAK56 package | Single FETs, MOSFETs | 1 | Active | NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. |
PSMN9R8-30MLCN-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology | Transistors | 1 | Active | Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
| Transistors | 1 | Active | |
PSMNR55-40SSHN-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Transistors | 1 | Active | 500 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique "SchottkyPlus" technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies, and also safe and reliable switching at high load-current. |
PSMNR56-25YLEN-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E | Discrete Semiconductor Products | 1 | Active | N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56E package optimized for low RDSonand strong safe operating area, optimized for hot-swap, inrush and linear-mode applications. |
PSMNR58-30YLHN-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Discrete Semiconductor Products | 1 | Active | Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon. Low IDSSleakage even when hot, high efficiency and high current rated to 380 A, optimized for DC load switch and hot-swap applications. |
| FETs, MOSFETs | 1 | Active | |
PSMNR67-30YLEN-channel 30 V, 0.70 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E | Discrete Semiconductor Products | 1 | Active | N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56E package optimized for low RDSonand strong safe operating area, optimized for hot-swap, inrush and linear-mode applications. |
PSMNR70N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Single FETs, MOSFETs | 2 | Active | 425 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique "SchottkyPlus" technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies, and also safe and reliable switching at high load-current. |
