PSMNR90-80ASE Series

N-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

Catalog

N-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [x]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Power Dissipation (Max)
Nexperia USA Inc. PSMNR90-80ASEJ	3.6 V	36802 pF	12-BESOP Exposed Pad	9.4 mm	0.37 in	495 A	20 V	10 V	504 nC	MOSFET (Metal Oxide)	175 °C	-55 °C	Surface Mount	0.9 mOhm	80 V	CCPAK1212	N-Channel	1.55 kW

Catalog

N-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

Description

N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMNR90-80ASE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212).