PSMNR90-40YSN Series

N-channel 40 V, 0.97 mOhm, ASFET for Battery System in LFPAK56E

Catalog

N-channel 40 V, 0.97 mOhm, ASFET for Battery System in LFPAK56E

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature	Current - Continuous Drain (Id) @ 25°C
Nexperia USA Inc. PSMNR90-40YSNX	3.6 V	268 W	Surface Mount	N-Channel	10 V	SC-100 SOT-669	0.97 mOhm	20 V	189 nC	LFPAK56 Power-SO8	40 V	MOSFET (Metal Oxide)	175 °C	-55 °C	10622 pF	Schottky Diode (Body)	320 A

Catalog

N-channel 40 V, 0.97 mOhm, ASFET for Battery System in LFPAK56E

Description

ASFET for Battery System applications, characterized by low RDSonand strong SOA capability for reduced I2R conduction losses. ASFETs deliver high efficiency, reduced heat generation and superior handling of inrush current during transient and fault conditions.