PSMN5R0 Series
Manufacturer: Freescale Semiconductor - NXP
MOSFET N-CH 40V 85A LFPAK33
| Part | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Freescale Semiconductor - NXP | 20 V | 85 A | Surface Mount | 29 nC | LFPAK33 | 2010 pF | MOSFET (Metal Oxide) | 40 V | -55 °C | 175 ░C | 10 V | N-Channel | 83 W | 3.6 V | |||||
Freescale Semiconductor - NXP | 20 V | 85 A | Surface Mount | LFPAK33 | 2649 pF | MOSFET (Metal Oxide) | 40 V | -55 °C | 175 ░C | 4.5 V 10 V | N-Channel | 83 W | 39 nC | 2.15 V | |||||
Freescale Semiconductor - NXP | 20 V | 120 A | Through Hole | 170 nC | I2PAK | 9900 pF | MOSFET (Metal Oxide) | 100 V | -55 °C | 175 ░C | 10 V | N-Channel | 338 W | I2PAK TO-262-3 Long Leads TO-262AA | 5 mOhm | ||||
Freescale Semiconductor - NXP | 20 V | 91 A | Surface Mount | 29 nC | LFPAK56 Power-SO8 | 1760 pF | MOSFET (Metal Oxide) | 30 V | -55 °C | 175 ░C | 4.5 V 10 V | N-Channel | 2.15 V | SC-100 SOT-669 | 5 mOhm | 61 W | |||
Freescale Semiconductor - NXP | 20 V | 100 A | Through Hole | TO-220AB | 6793 pF | MOSFET (Metal Oxide) | 80 V | -55 °C | 175 ░C | 10 V | N-Channel | 101 nC | TO-220-3 | 4.7 mOhm | 270 W |