PSMN5R3-25MLD Series

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Catalog

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature	Operating Temperature [Max]	Operating Temperature [Min]
Nexperia USA Inc. PSMN5R3-25MLDX	MOSFET (Metal Oxide)	4.5 V 10 V	70 A	LFPAK33	51 W	Surface Mount	12.7 nC	20 V	5.9 mOhm	25 V	2.2 V	N-Channel	858 pF	Schottky Diode (Body)	175 °C	-55 °C

Catalog

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.