PSMN047-100NSE Series
N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement
Manufacturer: Nexperia USA Inc.
Catalog
N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement
| Part | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Package / Case | Rds On (Max) @ Id, Vgs | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 18.4 A | Surface Mount | DFN2020M-6 | 815 pF | 10 V | 100 V | 6-UDFN Exposed Pad | 53.4 mOhm | N-Channel | 13.3 nC | MOSFET (Metal Oxide) | 175 °C | -55 °C | 3.6 V | 42 W | 20 V |
Description
AI
New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90 W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of "soft-start", thermal management and power density requirements. These ASFETs combine enhanced SOA in a compact 2 mm x 2 mm footprint making them ideally placed for a variety of applications including PoE, eFuse and relay replacement.