PSMN040-100MSE Series

N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications

Catalog

N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications

Part	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Nexperia USA Inc. PSMN040-100MSEX	N-Channel	175 °C	-55 °C	Surface Mount	36.6 mOhm	100 V	20 V	LFPAK33	1470 pF	10 V	MOSFET (Metal Oxide)	30 A	30 nC

Catalog

N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications

Description

New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of "soft-start", thermal management and power density requirements.