| Transistors | 1 | Active | The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives. |
NUP1301Ultra low capacitance ESD protection array | Transient Voltage Suppressors (TVS) | 3 | Active | Ultra low capacitance ElectroStatic Discharge (ESD) protection array in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads, designed to protect one signal line in rail-to-rail configuration from the damage caused by ESD and other transients. |
NUP1301-QUltra low capacitance ESD protection array | Transient Voltage Suppressors (TVS) | 1 | Active | Ultra low capacitance ElectroStatic Discharge (ESD) protection array in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect one signal line in rail-to-rail configuration from the damage caused by ESD and other transients. |
| Circuit Protection | 1 | Active | Ultra low capacitance ElectroStatic Discharge (ESD) protection array in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads, designed to protect one signal line in rail-to-rail configuration from the damage caused by ESD and other transients. |
NUP1301U-QUltra low capacitance ESD protection array | Transient Voltage Suppressors (TVS) | 1 | Active | Ultra low capacitance ElectroStatic Discharge (ESD) protection array in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package designed to protect one signal line in rail-to-rail configuration from the damage caused by ESD and other transients. |
NX102960 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET | Discrete Semiconductor Products | 2 | NRND | Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
NX13860 V, dual N-channel Trench MOSFET | Single FETs, MOSFETs | 7 | Active | Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
| Single FETs, MOSFETs | 1 | Active | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
| FETs, MOSFETs | 1 | Active | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
NX138BK60 V, single N-channel Trench MOSFET | Discrete Semiconductor Products | 1 | Active | N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
