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60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Package / Case | Mounting Type | Supplier Device Package | Power Dissipation (Max) | Power Dissipation (Max) | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 1.5 V | 2.5 V 10 V | 4.2 Ohm | 270 mA | 0.6 nC | 20 V | SC-101 SOT-883 | Surface Mount | SOT-883 | 2.3 W | 340 mW | MOSFET (Metal Oxide) | 150 °C | -55 °C | 15 pF | N-Channel | 60 V |