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Nexperia USA Inc.

Series List(9390)

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Series	Category	# Parts	Status	Description

Standalone parts(5568)

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Part	Category	Description
Nexperia USA Inc. PBSS4350X-QZ	Discrete Semiconductor Products	TRANSISTOR GP BJT NPN 50V 3A 3-PIN SOT-89 T/R
Nexperia USA Inc. PDTD143XT-QR	Discrete Semiconductor Products	PDTD143XT-Q/SOT23/TO-236AB
Nexperia USA Inc. BAV99/DG/B3,235Obsolete	Discrete Semiconductor Products	DIODE ARRAY GEN PURP 100V 215MA
Nexperia USA Inc. 74HCS21PW-Q100J	Integrated Circuits (ICs)	74HCS21PW-Q100/SOT402/TSSOP14
Nexperia USA Inc. PMCB60XNEAYL	Discrete Semiconductor Products	SMALL SIGNAL MOSFET FOR MOBILE
Nexperia USA Inc. LD6836TD/13P,125Obsolete	Integrated Circuits (ICs)	IC REG LINEAR 1.3V 300MA 5-TSOP
Nexperia USA Inc. 74HC688PW,112Obsolete	Integrated Circuits (ICs)	IC ID COMPARATOR 8BIT 20-TSSOP
Nexperia USA Inc. PDZ6.2B-QZ	Discrete Semiconductor Products	DIODE ZENER 6.2V 400MW SOD323
Nexperia USA Inc. BUK4D38-20PH	Discrete Semiconductor Products	SMALL SIGNAL MOSFETS FOR AUTOMOT
Nexperia USA Inc. 74ALVT16373DGG,512Obsolete	Integrated Circuits (ICs)	IC D-TYPE TRANSP 8:8 48-TSSOP

Series	Category	# Parts	Status	Description

NSF040120L4A01200 V, 40 mΩ, N-channel SiC MOSFET	Single FETs, MOSFETs	1	Active	The NSF040120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF040120L4A11200 V, 40 mΩ, N-channel SiC MOSFET	Transistors	1	Active	The NSF040120L4A1 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF040120T2A11200 V, 40 mΩ, N-channel SiC MOSFET	Discrete Semiconductor Products	1	Active	The NSF040120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSontemperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial applications, such as E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF060120D7A01200 V, 60 mΩ, N-channel SiC MOSFET	Transistors	1	Active	The NSF060120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF060120D7A0-Q1200 V, 60 mΩ N-channel SiC MOSFET for automotive applications	FETs, MOSFETs	1	Active	The NSF060120D7A0-Q is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage automotive applications like E-vehicle onboard charger, DC-DC converter and auxiliary drives.
NSF060120L3A01200 V, 60 mΩ, N-channel SiC MOSFET	Single FETs, MOSFETs	1	Active	The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF060120L4A01200 V, 60 mOhm, N-channel SiC MOSFET	FETs, MOSFETs	1	Active	The NSF060120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247-4 plastic package for through hole PCB mounting technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF060120T2A01200 V, 60 mΩ, N-channel SiC MOSFET	FETs, MOSFETs	1	Active	The NSF060120T2A0 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSontemperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial applications, such as E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF080120D7A01200 V, 80 mΩ, N-channel SiC MOSFET	Single FETs, MOSFETs	1	Active	The NSF080120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF080120L3A01200 V, 80 mΩ, N-channel SiC MOSFET	Single FETs, MOSFETs	1	Active	The NSF080120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.