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60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Package / Case | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs | Technology | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 260 mA | 20 V | 3-XFDFN | 2.3 W 360 mW | N-Channel | 60 V | 150 °C | -55 °C | 0.6 nC | MOSFET (Metal Oxide) | 4.2 Ohm | Surface Mount | 1.5 V | 2.5 V 10 V | 15 pF | DFN0606-3 |