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60 V, single N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, single N-channel Trench MOSFET
60 V, single N-channel Trench MOSFET
| Part | Rds On (Max) @ Id, Vgs | FET Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 3.5 Ohm | N-Channel | 1.5 V | 20.2 pF | Surface Mount | TO-236AB | 2.5 V 10 V | MOSFET (Metal Oxide) | 20 V | 265 mA | 150 °C | -55 °C | 310 mW | SC-59 SOT-23-3 TO-236-3 | 0.49 nC | 60 V |