NSF080120L3A0 Series

1200 V, 80 mΩ, N-channel SiC MOSFET

Catalog

1200 V, 80 mΩ, N-channel SiC MOSFET

Part	Power Dissipation (Max)	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Max]	Vgs (Max) [Min]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type
Nexperia USA Inc. NSF080120L3A0Q	183 W	TO-247-3	Through Hole	2.9 V	1.2 kV	TO-247-3L	1335 pF	22 V	-10 V	35 A	175 °C	-55 °C	120 mOhm	52 nC	15 V 18 V	N-Channel

Catalog

1200 V, 80 mΩ, N-channel SiC MOSFET

Description

The NSF080120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.