NSF060120D7A0-Q Series

1200 V, 60 mΩ N-channel SiC MOSFET for automotive applications

Catalog

1200 V, 60 mΩ N-channel SiC MOSFET for automotive applications

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Qualification	Mounting Type	Grade	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Max]	Vgs (Max) [Min]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
Nexperia USA Inc. NSF060120D7A0-QJ	57 nC	N-Channel	1.2 kV	AEC-Q101	Surface Mount	Automotive	1335 pF	22 V	-10 V	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	175 °C	-55 °C	38 A	2.9 V	TO-236-7	15 V 18 V	183 W

Catalog

1200 V, 60 mΩ N-channel SiC MOSFET for automotive applications

Description

The NSF060120D7A0-Q is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage automotive applications like E-vehicle onboard charger, DC-DC converter and auxiliary drives.