NSF040120L4A0 Series

1200 V, 40 mΩ, N-channel SiC MOSFET

Catalog

1200 V, 40 mΩ, N-channel SiC MOSFET

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Vgs (Max) [Min]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type
Nexperia USA Inc. NSF040120L4A0Q	60 mOhm	65 A	TO-247-4	2.9 V	2600 pF	TO-247	175 °C	-55 °C	306 W	1.2 kV	15 V 18 V	22 V	-10 V	Through Hole	95 nC	N-Channel

Catalog

1200 V, 40 mΩ, N-channel SiC MOSFET

Description

The NSF040120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.