| Single FETs, MOSFETs | 38 | Active | Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel
switch-mode power transistors with lower EMI characteristics and lower cost
compared to previous generation devices. These MOSFETs / FREDFETs have been
optimized for both hard and soft switching in high frequency, high voltage
applications rated above 500 W.
The Power MOS 8™ series is a result of extensive research into quiet switching.
Input and reverse transfer capacitance values as well as their ratio were set
at specific values to achieve quiet switching with minimal switching loss. The
Power MOS 8™ series of devices are inherently quiet switching, stable when
connected in parallel, very efficient, and lower cost than previous
generations.
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement
mode power MOSFETS. Both conduction and switching losses are addressed with
Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines
lower conduction and switching losses along with exceptionally fast switching
speeds.
Power MOS V® can still provide the best trade-off between performance and
cost in some applications. Power MOS V® utilizes a low resistance aluminum
metal gate structure. This allows for faster gate signal propagation than is
possible with conventional polysilicon gate structures. The result is extremely
low internal chip equivalent gate resistances (EGR) that are up to an order of
magnitude lower than competitive devices which enables uniform high speed
switching across the entire chip.
Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a
MOSFET with a faster recovery intrinsic body diode. This results in improved
reliability in ZVS circuits due to shorter minority carrier lifetime and
increased commutation dv/dt ruggedness. If a fast recovery body diode is not
needed, MOSFET versions are available. |
| Transistors | 20 | Active | Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel
switch-mode power transistors with lower EMI characteristics and lower cost
compared to previous generation devices. These MOSFETs / FREDFETs have been
optimized for both hard and soft switching in high frequency, high voltage
applications rated above 500 W.
The Power MOS 8™ series is a result of extensive research into quiet switching.
Input and reverse transfer capacitance values as well as their ratio were set
at specific values to achieve quiet switching with minimal switching loss. The
Power MOS 8™ series of devices are inherently quiet switching, stable when
connected in parallel, very efficient, and lower cost than previous
generations.
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement
mode power MOSFETS. Both conduction and switching losses are addressed with
Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines
lower conduction and switching losses along with exceptionally fast switching
speeds.
Power MOS V® can still provide the best trade-off between performance and
cost in some applications. Power MOS V® utilizes a low resistance aluminum
metal gate structure. This allows for faster gate signal propagation than is
possible with conventional polysilicon gate structures. The result is extremely
low internal chip equivalent gate resistances (EGR) that are up to an order of
magnitude lower than competitive devices which enables uniform high speed
switching across the entire chip.
Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a
MOSFET with a faster recovery intrinsic body diode. This results in improved
reliability in ZVS circuits due to shorter minority carrier lifetime and
increased commutation dv/dt ruggedness. If a fast recovery body diode is not
needed, MOSFET versions are available. |
| FETs, MOSFETs | 16 | Active | Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement
mode power MOSFETS. Both conduction and switching losses are addressed with
Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines
lower conduction and switching losses along with exceptionally fast switching
speeds.
Power MOS V® can still provide the best trade-off between performance and
cost in some applications. Power MOS V® utilizes a low resistance aluminum
metal gate structure. This allows for faster gate signal propagation than is
possible with conventional polysilicon gate structures. The result is extremely
low internal chip equivalent gate resistances (EGR) that are up to an order of
magnitude lower than competitive devices which enables uniform high speed
switching across the entire chip.
Body
Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a
MOSFET with a faster recovery intrinsic body diode. This results in improved
reliability in ZVS circuits due to shorter minority carrier lifetime and
increased commutation dv/dt ruggedness. If a fast recovery body diode is not
needed, MOSFET versions are available. |
| Transistors | 8 | Active | Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement
mode power MOSFETS. Both conduction and switching losses are addressed with
Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines
lower conduction and switching losses along with exceptionally fast switching
speeds.
Power MOS V® can still provide the best trade-off between performance and
cost in some applications. Power MOS V® utilizes a low resistance aluminum
metal gate structure. This allows for faster gate signal propagation than is
possible with conventional polysilicon gate structures. The result is extremely
low internal chip equivalent gate resistances (EGR) that are up to an order of
magnitude lower than competitive devices which enables uniform high speed
switching across the entire chip.
Body
Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a
MOSFET with a faster recovery intrinsic body diode. This results in improved
reliability in ZVS circuits due to shorter minority carrier lifetime and
increased commutation dv/dt ruggedness. If a fast recovery body diode is not
needed, MOSFET versions are available. |
| Transistors | 21 | Active | Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel
switch-mode power transistors with lower EMI characteristics and lower cost
compared to previous generation devices. These MOSFETs / FREDFETs have been
optimized for both hard and soft switching in high frequency, high voltage
applications rated above 500 W.
The Power MOS 8™ series is a result of extensive research into quiet switching.
Input and reverse transfer capacitance values as well as their ratio were set
at specific values to achieve quiet switching with minimal switching loss. The
Power MOS 8™ series of devices are inherently quiet switching, stable when
connected in parallel, very efficient, and lower cost than previous
generations.
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement
mode power MOSFETS. Both conduction and switching losses are addressed with
Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines
lower conduction and switching losses along with exceptionally fast switching
speeds.
Power MOS V® can still provide the best trade-off between performance and
cost in some applications. Power MOS V® utilizes a low resistance aluminum
metal gate structure. This allows for faster gate signal propagation than is
possible with conventional polysilicon gate structures. The result is extremely
low internal chip equivalent gate resistances (EGR) that are up to an order of
magnitude lower than competitive devices which enables uniform high speed
switching across the entire chip.
Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a
MOSFET with a faster recovery intrinsic body diode. This results in improved
reliability in ZVS circuits due to shorter minority carrier lifetime and
increased commutation dv/dt ruggedness. If a fast recovery body diode is not
needed, MOSFET versions are available. |
| FETs, MOSFETs | 2 | Active | What is a Linear MOSFET?
A MOSFET specifically designed to be more robust than a standard MOSFET when
operated with both high voltage and high current near DC conditions (>100
msecs).
The Problem with SMPS MOSFETs
MOSFETs optimized for high-frequency SMPS applications have poor high voltage
DC SOA. Most SMPS-type MOSFETs overstate SOA capability at high voltage on the
datasheets. Above ~30V and DC conditions, SOA drops faster than is indicated by
Power Dissipation (PD) limited operation. For pulsed loads (t <10 ms), there
is generally no problem using a standard MOSFET.
Technology Innovation
Introduced in 1999, Microchip modified its proprietary patented self-aligned
metal gate MOSFET technology for enhanced performance in high voltage, linear
applications. These linear MOSFETs typically provide 1.5–2.0 times the DC SOA
capability at high voltage compared to other MOSFET technologies optimized for
switching applications. |
MP4KE10400 Watt Transient Voltage Suppressors | TVS Diodes | 2 | Active | This family of high-reliability, plastic packaged Transient Voltage Suppressors offer high reliability at an affordable price. Standoff voltage values range from 5.8 to 342 volts and 5% or 10% tolerance options are available. Source control is standard and three increasingly stringent screening options for enhanced reliability are available. |
| TVS Diodes | 6 | Active | This family of high-reliability, plastic packaged Transient Voltage Suppressors offer high reliability at an affordable price. Standoff voltage values range from 5.8 to 342 volts and 5% or 10% tolerance options are available. Source control is standard and three increasingly stringent screening options for enhanced reliability are available. |
MP4KE100400 Watt Transient Voltage Suppressors | Circuit Protection | 2 | Active | This family of high-reliability, plastic packaged Transient Voltage Suppressors offer high reliability at an affordable price. Standoff voltage values range from 5.8 to 342 volts and 5% or 10% tolerance options are available. Source control is standard and three increasingly stringent screening options for enhanced reliability are available. |
| Transient Voltage Suppressors (TVS) | 6 | Active | This family of high-reliability, plastic packaged Transient Voltage Suppressors offer high reliability at an affordable price. Standoff voltage values range from 5.8 to 342 volts and 5% or 10% tolerance options are available. Source control is standard and three increasingly stringent screening options for enhanced reliability are available. |
