MOSFET-LINEAR-600V Series

600V Linear MOSFET

Catalog

600V Linear MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25¯C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
Microchip Technology APL602J	9000 pF	-30 V	43 A	4 V	125 mOhm	ISOTOPÛ	565 W	12 V 12 V	600 V	SOT-227-4 miniBLOC	MOSFET (Metal Oxide)	Chassis Mount	-55 °C	150 °C	N-Channel
Microchip Technology APL602LG-1	9000 pF			4 V	125 mOhm	TO-264 (L)		12 V 12 V	600 V	TO-264-3 TO-264AA	MOSFET (Metal Oxide)	Through Hole	-55 °C	150 °C	N-Channel	730 W	49 A	30 V

Catalog

600V Linear MOSFET

Key Features

• * High Current &>200V>100msec

• * Used as a variable power resistor

• * Soft start application (limit surge currents)

• * Linear amplifier circuit

• * Active loads above 200 volts such as DC dynamic loads for testing power supplies, batteries, fuel cells, etc.

• * High voltage, high current constant current sources.

Description

What is a Linear MOSFET? A MOSFET specifically designed to be more robust than a standard MOSFET when operated with both high voltage and high current near DC conditions (>100 msecs). The Problem with SMPS MOSFETs MOSFETs optimized for high-frequency SMPS applications have poor high voltage DC SOA. Most SMPS-type MOSFETs overstate SOA capability at high voltage on the datasheets. Above ~30V and DC conditions, SOA drops faster than is indicated by Power Dissipation (PD) limited operation. For pulsed loads (t <10 ms), there is generally no problem using a standard MOSFET. Technology Innovation Introduced in 1999, Microchip modified its proprietary patented self-aligned metal gate MOSFET technology for enhanced performance in high voltage, linear applications. These linear MOSFETs typically provide 1.5–2.0 times the DC SOA capability at high voltage compared to other MOSFET technologies optimized for switching applications.