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Product families from fastSiC
| Series | Category | Parts | Status | Description |
|---|---|---|---|---|
Parts that are not part of a series
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Parts from fastSiC that are not part of a series
| Part Information | Pricing (lowest) | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) | Package / Case | Current - Reverse Leakage | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Package Name | Technology | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) | Mounting Type | Capacitance | Power Dissipation (Max) | Rds On (Max) | FET Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Drain to Source Voltage (Vdss) | Vgs (Max) Positive | Vgs (Max) Negative | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Tc) | Operating Temperature (Min) | Operating Temperature (Max) | Gate Charge (Max) | Vgs(th) (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Package Leads |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 fastSiC DIODE SIL CARB 650V 4A SMAF | Sign in to see pricing | 0 ns | 650 V | DO-221AC, SMA Flat Leads | 0.5 µA | 175 °C | -55 °C | 500 mA | No Recovery Time | 500 mA, 500 mA | DO-221AC (SlimSMA) | SiC (Silicon Carbide) Schottky | 4 A | 1.85 V | Surface Mount | 10 pF | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
 fastSiC DIODE SIL CARB 1200V 8.8A TO252 | Sign in to see pricing | 0 ns | 1200 V | DPAK (2 Leads + Tab), SC-63, TO-252-2, TO-252-3 | 5 µA | 175 °C | -55 °C | 500 mA | No Recovery Time | 500 mA, 500 mA | TO-252, TO-252 (DPAK) | SiC (Silicon Carbide) Schottky | 2 A, 8.8 A | 1.55 V | Surface Mount | 11 pF | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
 fastSiC DIODE SIC 1.2KV 3.6A DO221AC | Sign in to see pricing | 0 ns | 1200 V | DO-221AC, SMA Flat Leads | 5 µA | 175 °C | -55 °C | 500 mA | No Recovery Time | 500 mA, 500 mA | DO-221AC (SlimSMA) | SiC (Silicon Carbide) Schottky | 2 A, 3.6 A | 1.55 V | Surface Mount | 11 pF | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
 fastSiC SICFET N-CH 650V 169A TO-247-3L | Sign in to see pricing | — | — | TO-247-3 | — | — | — | — | — | — | TO-247-3L | SiCFET (Silicon Carbide) | — | — | Through Hole | — | 555 W | 18 mOhm | N-Channel | 18 V | 15 V | 650 V | 18 V | -8 V | 7390 pF | 169 A | -55 °C | 175 °C | 315 nC | 2.5 V | — | — | — |
 fastSiC SICFET N-CH 650V 140A TOLL | Sign in to see pricing | — | — | 8-PowerSFN | — | — | — | — | — | — | Toll | SiC (Silicon Carbide Junction Transistor) | — | — | Surface Mount | — | 375 W | — | N-Channel | — | — | 650 V | — | — | 7390 pF | 140 A | -55 °C | 175 °C | 315 nC | — | 18 V | 18 V | — |
fastSiC SICFET N-CH 650V 140A TOLL | Sign in to see pricing | — | — | 8-PowerSFN | — | — | — | — | — | — | Toll | SiCFET (Silicon Carbide) | — | — | Surface Mount | — | 375 W | 18 mOhm | N-Channel | — | — | 650 V | — | — | 7390 pF | 140 A | -55 °C | 175 °C | 315 nC | 2.5 V | 18 V | 18 V | — |
 fastSiC SICFET N-CH 650V 169A TO-247-4L | Sign in to see pricing | — | — | TO-247-4 | — | — | — | — | — | — | TO-247-4L | SiCFET (Silicon Carbide) | — | — | Through Hole | — | 555 W | 18 mOhm | N-Channel | — | — | 650 V | 18 V | -8 V | 7390 pF | 169 A | -55 °C | 175 °C | 315 nC | 2.5 V | 18 V | — | — |
 fastSiC SICFET N-CH 650V 110A TO-247-3L | Sign in to see pricing | — | — | TO-247-3 | — | — | — | — | — | — | TO-247-3L | SiCFET (Silicon Carbide) | — | — | Through Hole | — | 405 W | 28 mOhm | N-Channel | 18 V | 15 V | 650 V | 18 V | -8 V | 4437 pF | 110 A | -55 °C | 175 °C | 194 nC | 2.5 V | — | — | — |
 fastSiC SICFET N-CH 650V 101A TOLL | Sign in to see pricing | — | — | 8-PowerSFN | — | — | — | — | — | — | Toll | SiC (Silicon Carbide Junction Transistor), SiCFET (Silicon Carbide) | — | — | Surface Mount | — | 333 W | 28 mOhm | N-Channel | — | — | 650 V | — | — | 4437 pF | 101 A | -55 °C | 175 °C | 194 nC | 2.5 V | 18 V | 18 V | — |
 fastSiC SICFET N-CH 650V 101A TO-263-7L | Sign in to see pricing | — | — | — | — | — | — | — | — | — | D2PAK, D2PAK-7L, TO-263-7L | SiC (Silicon Carbide Junction Transistor), SiCFET (Silicon Carbide) | — | — | Surface Mount | — | 333 W | 28 mOhm | N-Channel | — | — | 650 V | — | — | 4437 pF | 101 A | -55 °C | 175 °C | 194 nC | 2.5 V | 18 V | 18 V | 7 Leads |