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Product families from fastSiC
| Series | Category | Parts | Status | Description |
|---|---|---|---|---|
Parts that are not part of a series
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Parts from fastSiC that are not part of a series
| Part Information | Pricing (lowest) | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) | Package / Case | Current - Reverse Leakage | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Package Name | Technology | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) | Mounting Type | Capacitance | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Tc) | Gate Charge (Max) | FET Type | Power Dissipation (Max) | Vgs (Max) | Rds On (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs (Max) Positive | Vgs (Max) Negative | Package Leads | Vgs(th) (Max) | Grade | Qualification | Current - Continuous Drain (Id) | Package Length | Package Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 fastSiC DIODE SIL CARB 650V 4A SMAF | Sign in to see pricing | 0 ns | 650 V | DO-221AC, SMA Flat Leads | 0.5 µA | 175 °C | -55 °C | 500 mA | No Recovery Time | 500 mA, 500 mA | DO-221AC (SlimSMA) | SiC (Silicon Carbide) Schottky | 4 A | 1.85 V | Surface Mount | 10 pF | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
 fastSiC DIODE SIL CARB 1200V 8.8A TO252 | Sign in to see pricing | 0 ns | 1200 V | DPAK (2 Leads + Tab), SC-63, TO-252-2, TO-252-3 | 5 µA | 175 °C | -55 °C | 500 mA | No Recovery Time | 500 mA, 500 mA | TO-252, TO-252 (DPAK) | SiC (Silicon Carbide) Schottky | 2 A, 8.8 A | 1.55 V | Surface Mount | 11 pF | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
 fastSiC DIODE SIC 1.2KV 3.6A DO221AC | Sign in to see pricing | 0 ns | 1200 V | DO-221AC, SMA Flat Leads | 5 µA | 175 °C | -55 °C | 500 mA | No Recovery Time | 500 mA, 500 mA | DO-221AC (SlimSMA) | SiC (Silicon Carbide) Schottky | 2 A, 3.6 A | 1.55 V | Surface Mount | 11 pF | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
 fastSiC SICFET N-CH 650V 140A TOLL | Sign in to see pricing | — | — | 8-PowerSFN | — | — | — | — | — | — | Toll | SiC (Silicon Carbide Junction Transistor) | — | — | Surface Mount | — | 650 V | 18 V | 7390 pF | -55 °C | 175 °C | 140 A | 315 nC | N-Channel | 375 W | 18 V | — | — | — | — | — | — | — | — | — | — | — | — |
 fastSiC SICFET N-CH 650V 62A TO-263-7L | Sign in to see pricing | — | — | — | — | — | — | — | — | — | D2PAK, TO-263-7L | SiC (Silicon Carbide Junction Transistor) | — | — | Surface Mount | — | 650 V | — | 3015 pF | -55 °C | 175 °C | 62 A | 125 nC | N-Channel | 187 W | — | 45 mOhm | 18 V | 15 V | 18 V | -8 V | 7 Leads | 2.5 V | — | — | — | — | — |
 fastSiC SICFET N-CH 650V 43A TO-247-3L | Sign in to see pricing | — | — | TO-247-3 | — | — | — | — | — | — | TO-247-3L | SiCFET (Silicon Carbide) | — | — | Through Hole | — | 650 V | 18 V | 1499 pF | -55 °C | 175 °C | 43 A | 69 nC | N-Channel | 202 W | — | 80 mOhm | — | — | 18 V | -8 V | — | 2.5 V | Automotive | AEC-Q101 | — | — | — |
 fastSiC SICFET N-CH 650V 23.5A TOLL | Sign in to see pricing | — | — | 8-PowerSFN | — | — | — | — | — | — | Toll | SiC (Silicon Carbide Junction Transistor) | — | — | Surface Mount | — | 650 V | 18 V | 1000 pF, 1000 pF | -55 °C | 175 °C | 23.5 A | 43 nC | N-Channel | 115 W | 18 V | — | — | — | — | — | — | 2.5 V | — | — | 23.5 A | — | — |
 fastSiC SICFET N-CH 650V 8.6A PQFN5X6 | Sign in to see pricing | — | — | 9-PowerTDFN | — | — | — | — | — | — | 8-PQFN, Power56 | SiC (Silicon Carbide Junction Transistor) | — | — | Surface Mount | — | 650 V | — | 318 pF | -55 °C | 175 °C | 8.6 A | 14.5 nC | N-Channel | 41 W | — | 420 mOhm | 18 V | 15 V | 18 V | -8 V | — | 1.6 V | — | — | — | 5 mm | 6 mm |
 fastSiC SICFET N-CH 750V 136A TO-247-4L | Sign in to see pricing | — | — | TO-247-4 | — | — | — | — | — | — | TO-247-4L | SiCFET (Silicon Carbide) | — | — | Through Hole | — | 750 V | 18 V | 7252 pF | -55 °C | 175 °C | 136 A | 329 nC | N-Channel | 555 W | — | 20 mOhm | — | — | 18 V | -8 V | — | 2.5 V | — | — | — | — | — |
fastSiC DIODE SIL CARB 650V 6.2A DO221AC | Sign in to see pricing | 0 ns | 650 V | DO-221AC, SMA Flat Leads | 35 µA | 175 °C | -55 °C | 500 mA | No Recovery Time | 500 mA, 500 mA | DO-221AC (SlimSMA) | SiC (Silicon Carbide) Schottky | 4 A, 6.2 A | 1.55 V | Surface Mount | 16 pF | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |