Technical Specifications
Parameters and characteristics for this part
| Specification | FC12002A |
|---|---|
| Capacitance | 11 pF |
| Current - Average Rectified (Io) | 8.8 A |
| Current - Reverse Leakage | 5 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-252-2 |
| Package Name | TO-252 (DPAK) |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.55 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
CAD
3D models and CAD resources for this part
Description
General part information
FC12002A
DIODE SIL CARB 1200V 8.8A TO252
Documents
Technical documentation and resources
No documents available