Technical Specifications
Parameters and characteristics for this part
| Specification | FF06010QA |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 169 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 315 nC |
| Input Capacitance (Ciss) (Max) | 7390 pF |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-4 |
| Package Name | TO-247-4L |
| Power Dissipation (Max) | 555 W |
| Rds On (Max) | 18 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -8 V |
| Vgs (Max) Positive | 18 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 57.43 | <4d |
| 10 | $ 21.06 | |||
| 100 | $ 19.62 | |||
| 600 | $ 19.14 | |||
CAD
3D models and CAD resources for this part
Description
General part information
FF06010QA
SICFET N-CH 650V 169A TO-247-4L
Documents
Technical documentation and resources