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FF06100J-7
Discrete Semiconductor Products

FF06020J-7A

Active
fastSiC

SICFET N-CH 650V 101A TO-263-7L

FF06100J-7
Discrete Semiconductor Products

FF06020J-7A

Active
fastSiC

SICFET N-CH 650V 101A TO-263-7L

Technical Specifications

Parameters and characteristics for this part

SpecificationFF06020J-7A
Current - Continuous Drain (Id) (Tc)101 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Max)194 nC
Input Capacitance (Ciss) (Max)4437 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package Leads7 Leads
Package NameD2PAK, D2PAK-7L
Power Dissipation (Max)333 W
Rds On (Max)28 mOhm
TechnologySiC (Silicon Carbide Junction Transistor), SiCFET (Silicon Carbide)
Vgs (Max)18 V
Vgs(th) (Max)2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTape & Reel (TR) 1$ 35.51<4d
10$ 13.02
100$ 12.13
4000$ 11.84

CAD

3D models and CAD resources for this part

Description

General part information

FF06020J-7A

N-Channel 650 V 101A (Tc) 333W (Tc) Surface Mount D2PAK-7L

Documents

Technical documentation and resources