Discrete Semiconductor Products

FF06010E-3A

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SICFET N-CH 650V 169A TO-247-3L

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Discrete Semiconductor Products

Active

SICFET N-CH 650V 169A TO-247-3L

Technical Specifications

Parameters and characteristics for this part

Specification	FF06010E-3A

Current - Continuous Drain (Id) @ 25°C	169 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	315 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7390 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	555 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	TO-247-3L
Vgs (Max) [Max]	18 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

SICFET N-CH 650V 169A TO-247-3L

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