Technical Specifications
Parameters and characteristics for this part
| Specification | FF06020E-3A |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 110 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 194 nC |
| Input Capacitance (Ciss) (Max) | 4437 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3L |
| Power Dissipation (Max) | 405 W |
| Rds On (Max) | 28 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -8 V |
| Vgs (Max) Positive | 18 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 35.91 | <4d |
| 10 | $ 13.17 | |||
| 100 | $ 12.27 | |||
| 600 | $ 11.97 | |||
CAD
3D models and CAD resources for this part
Description
General part information
FF06020E-3A
SICFET N-CH 650V 110A TO-247-3L
Documents
Technical documentation and resources
No documents available