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Analog Devices Inc./Maxim Integrated
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Analog Devices Inc./Maxim Integrated LTC1879EGN#TRUnknown | Integrated Circuits (ICs) | IC REG BUCK ADJ 1.2A 16SSOP |
Analog Devices Inc./Maxim Integrated LTC2208CUP#TRUnknown | Integrated Circuits (ICs) | IC ADC 16BIT 130MSPS 64-QFN |
Analog Devices Inc./Maxim Integrated ADP2108ACBZ-1.1-R7Obsolete | Integrated Circuits (ICs) | IC REG BUCK 1.1V 600MA 5WLCSP |
Analog Devices Inc./Maxim Integrated EV1HMC832ALP6GObsolete | Development Boards Kits Programmers | EVAL BOARD FOR HMC832ALP6GE |
Analog Devices Inc./Maxim Integrated LTC488ISWUnknown | Integrated Circuits (ICs) | IC LINE RCVR RS485 QUAD 16-SOIC |
Analog Devices Inc./Maxim Integrated LTC6946IUFD-2Obsolete | Integrated Circuits (ICs) | IC CLK/FREQ SYNTH 28QFN |
Analog Devices Inc./Maxim Integrated MAX5556ESA+TObsolete | Integrated Circuits (ICs) | IC DAC/AUDIO 16BIT 50K 8SOIC |
Analog Devices Inc./Maxim Integrated EVAL-FLTR-LD-1RZUnknown | Unclassified | EVAL BRD FOR AD800 SERIES |
Analog Devices Inc./Maxim Integrated | Development Boards Kits Programmers | BOARD EVAL FOR AD9963 |
Analog Devices Inc./Maxim Integrated LTC1296CCSW#TRUnknown | Integrated Circuits (ICs) | IC DATA ACQ SYS 12BIT 5V 20SOIC |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
HMC516-DieLow Noise Amplifier Chip, 7 - 17 GHz | RF Amplifiers | 1 | Unknown | The HMC516 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) which covers the 7 to 17 GHz frequency range. The HMC516 provides 20 dB of small signal gain, 1.8 dB of noise figure and has an output IP3 greater than +20 dBm. The chip can easily be integrated into hybrid or MCM assemblies due to its small size. All data is tested with the chip in a 50 Ohm test fixture connected via 0.075mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires may also be used to make the RFIN and RFOUT connections.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATTest Equipment and SensorsMilitary & Space |
HMC516LC5Low Noise Amplifier SMT, 9 - 18 GHz | RF and Wireless | 1 | Active | The HMC516LC5 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) housed in a leadless "Pb free" RoHS compliant SMT package. The HMC516LC5 provides 20 dB of small signal gain, 2 dB of noise figure and has an output IP3 of +25 dBm. The P1dB output power of +13 dBm enables the LNA to also function as a LO driver for balanced, I/Q or image reject mixers. The HMC516LC5 allows the use of surface mount manufacturing techniques.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATTest Equipment and SensorsMilitary |
HMC517Low Noise Amplifier SMT, 17 - 26 GHz | Evaluation Boards | 2 | Active | The HMC517LC4 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) housed in a leadless "Pb free" RoHS compliant SMT package. The HMC517LC4 provides 19 dB of small signal gain, 2.5 dB of noise figure and has an output IP3 of +23 dBm. The P1dB output power of +13 dBm enables the LNA to also function as a LO driver for balanced, I/Q or image reject mixers. The HMC517LC4 allows the use of surface mount manufacturing techniques.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATTest Equipment and SensorsMilitary |
HMC517-DieGaAs pHEMT MMIC Low Noise Amplifier, 17 - 26 GHz | RF Amplifiers | 2 | Active | The HMC517 chip is a high dynamic range GaAs pHEMT MMIC Low Noise Amplifier (LNA) which covers the 17 to 26 GHz frequency range. The HMC517 provides 19 dB of small signal gain, 2.2 dB of noise figure and has an output IP3 greater than +24 dBm. The chip can easily be integrated into hybrid or MCM assemblies due to its small size. All data is tested with the chip in a 50 Ohm test fixture connected via 0.075mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires may also be used to make the RFIN and RFOUT connections.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATTest Equipment and SensorsMilitary & Space |
HMC517LC4Low Noise Amplifier SMT, 17 - 26 GHz | RF and Wireless | 2 | Active | The HMC517LC4 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) housed in a leadless "Pb free" RoHS compliant SMT package. The HMC517LC4 provides 19 dB of small signal gain, 2.5 dB of noise figure and has an output IP3 of +23 dBm. The P1dB output power of +13 dBm enables the LNA to also function as a LO driver for balanced, I/Q or image reject mixers. The HMC517LC4 allows the use of surface mount manufacturing techniques.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATTest Equipment and SensorsMilitary |
| RF Amplifiers | 2 | Active | ||
HMC519GaAs pHEMT MMIC Low Noise Amplifier Chip, 18 - 32 GHz | Development Boards, Kits, Programmers | 5 | Active | The HMC519LC4 is a high dynamic range GaAs pHEMT MMIC Low Noise Amplifier (LNA) housed in a leadless 4 x 4 mm ceramic surface mount package. The amplifier operates between 18 and 31 GHz, providing 14 dB of small signal gain, 3.5 dB noise figure and output IP3 of +23 dBm, while requiring only 75 mA from a +3V single supply. The P1dB output power of +11 dBm, enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC519LC4 also features I/Os that are DC blocked and internally matched to 50 Ohms, making it ideal for microwave radio and VSAT applications.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATTest Equipment & SensorsMilitary & Space |
HMC519LC4GaAs pHEMT MMIC Low Noise Amplifier, 18 - 31 GHz | RF Amplifiers | 1 | Active | The HMC519LC4 is a high dynamic range GaAs pHEMT MMIC Low Noise Amplifier (LNA) housed in a leadless 4 x 4 mm ceramic surface mount package. The amplifier operates between 18 and 31 GHz, providing 14 dB of small signal gain, 3.5 dB noise figure and output IP3 of +23 dBm, while requiring only 75 mA from a +3V single supply. The P1dB output power of +11 dBm, enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC519LC4 also features I/Os that are DC blocked and internally matched to 50 Ohms, making it ideal for microwave radio and VSAT applications.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATTest Equipment & SensorsMilitary & Space |
| RF, RFID, Wireless Evaluation Boards | 8 | Active | The HMC520 devices are compact I/Q MMIC mixers that are available in a chip (HMC520) or a leadless Pb-free SMT package, both of which can be used as either an IRM or a single sideband (SSB) upconverter. The mixers utilize two standard Hittite double-balanced mixer cells and a 90° hybrid fabricated in a GaAs metal semiconductor field effect transistor (MESFET) process. A low frequency quadrature hybrid was used to produce a 100 MHz USB IF output. These products are much smaller alternatives to hybrid style IRMs and SSB upconverter assemblies. All data shown for the HMC520 is taken with the chip mounted in a 50 Ω test fixture and includes the effects of 1 mil diameter × 20 mil length bond wires on each port. The HMC520LC4 eliminates the need for wire bonding allowing use of surface mount manufacturing techniques.ApplicationsPoint-to-pointPoint-to-multipoint radioDigital radioVery small aperture terminal (VSAT)C-band VSATMilitary radar and electronic countermeasure (ECM) | |
HMC520A6 GHz to 10 GHz, GaAs, MMIC, I/Q Mixer | RF and Wireless | 1 | Active | The HMC520A is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in-phase quadrature (I/Q) mixer in a 24-terminal, RoHS compliant, ceramic leadless chip carrier (LCC) package. The device can be used as either an image reject mixer or a single sideband upconverter. The mixer uses two standard double balanced mixer cells and a 90° hybrid fabricated in a GaAs, metal semiconductor field effect transistor (MESFET) process. The HMC520A is a much smaller alternative to a hybrid style image reject mixer and a single sideband upconverter assembly. The HMC520A eliminates the need for wire bonding, allowing the use of surface-mount manufacturing techniques.ApplicationsPoint to point microwave radiosPoint to multipoint radiosVideo satellites (VSATs)Digital radiosInstrumentationAutomatic test equipment (ATE) |