HMC507VCO SMT with Fo/2, 6.65 - 7.65 GHz | RF and Wireless | 4 | Active | The HMC507LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC507LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +13.5 dBm typical from a +5V supply. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONSVSAT RadioPoint to Point/Multi-Point RadioTest Equipment & Industrial ControlsMilitary End-Use |
| VCOs (Voltage Controlled Oscillators) | 3 | Active | |
HMC509VCO SMT with Fo/2, 7.8 - 8.8 GHz | VCOs (Voltage Controlled Oscillators) | 4 | Active | The HMC509LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC509LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +13 dBm typical from a +5V supply. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONSVSAT RadioPoint-to-Point/Multi-Point RadioTest Equipment & Industrial ControlsMilitary End-Use |
| Evaluation Boards | 5 | Active | |
| Development Boards, Kits, Programmers | 4 | Active | |
HMC512VCO with Fo/2 & Divide-by-4 SMT, 9.6 - 10.8 GHz | Crystals, Oscillators, Resonators | 2 | Active | The HMC512LP5(E) is a GaAs InGaP Herterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC512LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock and process due to the oscillator's monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage cont-rolled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONSPoint-to-Point RadiosPoint-to-Multi-Point RadiosTest Equipment & Industrial ControlsSATCOMMilitary End-Use |
| Crystals, Oscillators, Resonators | 3 | Active | |
HMC514VCO SMT with Fo/2 & Divide-by-4, 11.17 - 12.02 GHz | Development Boards, Kits, Programmers | 3 | Active | The HMC514LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC514LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +7 dBm typical from a +3V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONSVSAT RadioPoint-to-Point/Multi-Point RadioTest Equipment & Industrial ControlsMilitary End-Use |
HMC515VCO SMT with Fo/2 & Divide-by-4, 11.5 - 12.5 GHz | RF and Wireless | 2 | Active | The HMC515LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC515LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +10 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONSVSAT RadioPoint-to-Point/Multi-Point RadioTest Equipment & Industrial ControlsMilitary End-Use |
HMC516Low Noise Amplifier Chip, 7 - 17 GHz | Evaluation Boards | 4 | Active | The HMC516 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) which covers the 7 to 17 GHz frequency range. The HMC516 provides 20 dB of small signal gain, 1.8 dB of noise figure and has an output IP3 greater than +20 dBm. The chip can easily be integrated into hybrid or MCM assemblies due to its small size. All data is tested with the chip in a 50 Ohm test fixture connected via 0.075mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires may also be used to make the RFIN and RFOUT connections.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATTest Equipment and SensorsMilitary & Space |
