Analog Devices Inc./Maxim Integrated

The HMC1121 is a three-stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 4 W power amplifier with an integrated temperature compensated on-chip power detector that operates between 5.5 GHz and 8.5 GHz. The HMC1121 provides 28 dB of gain, 44 dBm output IP3, and 36.5 dBm of saturated output power at 30% PAE from a 7 V power supply.The HMC1121 exhibits excellent linearity and it is optimized for high capacity, point to point and point to multipoint radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification preceding the antenna.Ideal for supporting higher volume applications, the HMC1121 is provided in a 40-lead LFCSP package.ApplicationsPoint to point radiosPoint to multipoint radiosVery small aperture terminals (VSATs) and satellite communications (SATCOMs)Military electronic warfare (EW) and electronic counter measures (ECM)

The HMC1122 is a 6-bit digital attenuator operating from 0.1 GHz to 6 GHz with a 31.5 dB attenuation control range in 0.5 dB steps.The HMC1122 is implemented in a silicon process, offering very fast settling time, low power consumption, and high ESD robustness. The device features safe state transitions and optimized for excellent step accuracy and high linearity over frequency and temperature range. The RF input and output are internally matched to 50 Ω and do not require any external matching components. The design is bidirectional; therefore, the RF input and output are interchangeable.The HMC1122 operates on a single supply ranging from 3.3 V to 5 V with no performance change due to an on-chip regulator.The device incorporates a driver that provides both serial and parallel control of the attenuator. The device also features a user-selectable power-up state and a serial output port for cascading other serial controlled components.The HMC1122 comes in a RoHS compliant, compact, 4 mm × 4 mm LFCSP package, and is pin compatible to the HMC624A.A fully populated evaluation board is available.ApplicationsCellular infrastructureMicrowave radios and very small aperture terminals (VSATs)Test equipment and sensorsIF and RF designs

The HMC1126ACEZ is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), low noise amplifier that operates from 400 MHz to 52 GHz. The HMC1126ACEZ provides 12 dB of typical gain, 28.5 dBm typical output third-order intercept (OIP3), 17.5 dBm typical output power at 1 dB gain compression (OP1dB), and a 3.5 dB typical noise figure at 10 GHz to 26 GHz. The HMC1126ACEZ requires 85 mA from a 5 V supply. All of the typically required external passive components for operation (ac coupling capacitors and power supply decoupling capacitors) are integrated, which facilitates a small and compact printed circuit board (PCB) footprint.The HMC1126ACEZ is housed in a 5.00 mm × 5.00 mm, 24-terminal chip array small outline no lead cavity (LGA_CAV) package.APPLICATIONSTest instrumentationMilitary and space

The HMC1126 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 2 GHz to 50 GHz. The HMC1126 provides 11 dB of gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dB gain compression, while requiring 65 mA from a 5 V supply.The HMC1126 amplifier inputs/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).APPLICATIONSTest instrumentationMicrowave radios and VSATsMilitary and spaceTelecommunications infrastructureFiber optics

The HMC1131 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer(pHEMT), monolithic microwave integrated circuit (MMIC), driver amplifier that operates from 24 GHz to 35 GHz. The HMC1131 provides 22 dB of gain at the 24 GHz to 27 GHz range, 35 dBm output IP3, and 24 dBm of output power at 1 dB gain compression, while requiring 225 mA from a 5 V supply.The HMC1131 is capable of supplying 25 dBm of saturated output power and is housed in a compact, 4 mm × 4 mm ceramic leadless chip carrier (24-lead LCC). The HMC1131 is an ideal driver amplifier for a wide range of applications, including point-to-point radios, from 24 GHz to 35 GHz.ApplicationsPoint-to-point radiosPoint-to-multipoint radiosVSAT and SATCOM

The HMC1132LP5DE is a four-stage, GaAs pHEMT MMIC, 1 watt power amplifier that operates between 27 GHz and 32 GHz. The HMC1132LP5DE provides 22 dB of gain and 30.5 dBm of saturated output power at 22% PAE from a 6 V power supply.The HMC1132LP5DE exhibits excellent linearity and it is optimized for high capacity, point-to-point and point-to-multipoint radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification before the antenna.The HMC1132LP5DE amplifier input/outputs (I/Os) are internally matched to 50 Ω. The device is supplied in a compact, leadless QFN, 5 mm × 5 mm surface-mount package.ApplicationsPoint-to-point radiosPoint-to-multipoint radiosVSAT and SATCOMMilitary and space