TIP110%20(LEGACY%20FAIRCHILD) Series

Medium Power NPN Darlington Bipolar Power Transistor

Catalog

Medium Power NPN Darlington Bipolar Power Transistor

Part	Operating Temperature	Current - Collector Cutoff (Max)	Package / Case	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Frequency - Transition
ON Semiconductor TIP110TU	150 °C	2 mA	TO-220-3	2 W	2 A	TO-220-3	1000 hFE	60 V	2.5 V	Through Hole
ON Semiconductor TIP117		2 mA	TO-220-3	2 W	2 A	TO-220	1000 hFE		2.5 V	Through Hole	100 V	150 °C	-65 °C	PNP - Darlington
ON Semiconductor TIP112G		2 mA	TO-220-3	2 W	2 A	TO-220	1000 hFE		2.5 V	Through Hole	100 V	150 °C	-65 °C
ON Semiconductor TIP115G		2 mA	TO-220-3	2 W	2 A	TO-220	1000 hFE	60 V	2.5 V	Through Hole		150 °C	-65 °C	PNP - Darlington
ON Semiconductor TIP116		2 mA	TO-220-3	2 W	2 A	TO-220	1000 hFE		2.5 V	Through Hole	80 V	150 °C	-65 °C	PNP - Darlington
ON Semiconductor TIP117G		2 mA	TO-220-3	2 W	2 A	TO-220	1000 hFE		2.5 V	Through Hole	100 V	150 °C	-65 °C	PNP - Darlington
ON Semiconductor TIP116G		2 mA	TO-220-3	2 W	2 A	TO-220	1000 hFE		2.5 V	Through Hole	80 V	150 °C	-65 °C	PNP - Darlington
ON Semiconductor TIP116		2 mA	TO-220-3	50 W	2 A	TO-220-3	1000 hFE		2.5 V	Through Hole	80 V	150 °C	-65 °C	PNP - Darlington	25 MHz
ON Semiconductor TIP110		2 mA	TO-220-3	2 W	2 A	TO-220	1000 hFE	60 V	2.5 V	Through Hole		150 °C	-65 °C
ON Semiconductor TIP111G		2 mA	TO-220-3	2 W	2 A	TO-220	1000 hFE		2.5 V	Through Hole	80 V	150 °C	-65 °C

Catalog

Medium Power NPN Darlington Bipolar Power Transistor

Key Features

• High DC Current Gain - hFE = 2500 (typ) @ IC = 1.0 Adc

• Collector-Emitter Sustaining Voltage @ 30 mAVCEO(sus)= 60 Vdc (Min) TIP110, TIP115VCEO(sus)= 80 Vdc (Min) TIP111, TIP116VCEO(sus)= 100 Vdc (Min) TIP112, TIP117

• Low Collector-Emitter Saturation VoltageVCE(sat)= 2.5 Vdc (Max) @ IC= 2.0 Adc= 4.0 Vdc (Max) @ IC= 5.0 Adc

• Monolithic Construction with Built-In Base-Emitter Shunt Resistors

• Compact TO-220 AB Package

• Pb-Free Packages are Available

Description

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary devices.Replacement Active Part Number:TIP110