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TO-220-3
Discrete Semiconductor Products

TIP111G

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ON Semiconductor

TRANS DARLINGTON NPN 80V 2A 2000MW 3-PIN(3+TAB) TO-220AB TUBE

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TO-220-3
Discrete Semiconductor Products

TIP111G

Active
ON Semiconductor

TRANS DARLINGTON NPN 80V 2A 2000MW 3-PIN(3+TAB) TO-220AB TUBE

Technical Specifications

Parameters and characteristics for this part

SpecificationTIP111G
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]1000
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power - Max [Max]2 W
Supplier Device PackageTO-220
Vce Saturation (Max) @ Ib, Ic2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 0.64
10$ 0.47
100$ 0.34
DigikeyN/A 51$ 1.45
6300$ 1.45
Tube 1$ 1.46
10$ 0.92
100$ 0.61
500$ 0.48
1000$ 0.44
2000$ 0.40
5000$ 0.36
10000$ 0.34
ON SemiconductorN/A 1$ 0.36

Description

General part information

TIP111G

High DC Current Gain -hFE = 2500 (typ) @ Ic = 1.0 Adc

Collector-Emitter Sustaining Voltage @ 30 mAVCEO(sus)= 80 Vdc (Min)

Low Collector-Emitter Saturation VoltageVCE(sat)= 2.5 Vdc(Max) @ IC= 2.0 Adc