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INFINFIPAN60R360PFD7SXKSA1
Discrete Semiconductor Products

TIP116

Obsolete
ON Semiconductor

MEDIUM POWER NPN DARLINGTON BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheetPackage Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P+2
INFINFIPAN60R360PFD7SXKSA1
Discrete Semiconductor Products

TIP116

Obsolete
ON Semiconductor

MEDIUM POWER NPN DARLINGTON BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

DocumentsDatasheetPackage Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P+2

Technical Specifications

Parameters and characteristics for this part

SpecificationTIP116
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max)2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]1000 hFE
Frequency - Transition25 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power - Max [Max]50 W
Supplier Device PackageTO-220-3
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic [Max]2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

TIP110%20(LEGACY%20FAIRCHILD) Series

Medium Power NPN Darlington Bipolar Power Transistor

PartOperating TemperatureCurrent - Collector Cutoff (Max)Package / CasePower - Max [Max]Current - Collector (Ic) (Max) [Max]Supplier Device PackageDC Current Gain (hFE) (Min) @ Ic, Vce [Min]Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, Ic [Max]Mounting TypeVoltage - Collector Emitter Breakdown (Max) [Max]Operating Temperature [Max]Operating Temperature [Min]Transistor TypeFrequency - Transition
TO-220-3
ON Semiconductor
TIP110TU
150 °C
2 mA
TO-220-3
2 W
2 A
TO-220-3
1000 hFE
60 V
2.5 V
Through Hole
TO-220-3
ON Semiconductor
TIP117
2 mA
TO-220-3
2 W
2 A
TO-220
1000 hFE
2.5 V
Through Hole
100 V
150 °C
-65 °C
PNP - Darlington
onsemi-FJP5027OTU GP BJT Trans GP BJT NPN 800V 3A 50000mW 3-Pin(3+Tab) TO-220 Tube
ON Semiconductor
TIP112G
2 mA
TO-220-3
2 W
2 A
TO-220
1000 hFE
2.5 V
Through Hole
100 V
150 °C
-65 °C
TO-220-3
ON Semiconductor
TIP115G
2 mA
TO-220-3
2 W
2 A
TO-220
1000 hFE
60 V
2.5 V
Through Hole
150 °C
-65 °C
PNP - Darlington
INFINFIPAN60R360PFD7SXKSA1
ON Semiconductor
TIP116
2 mA
TO-220-3
2 W
2 A
TO-220
1000 hFE
2.5 V
Through Hole
80 V
150 °C
-65 °C
PNP - Darlington
onsemi-FJP5027OTU GP BJT Trans GP BJT NPN 800V 3A 50000mW 3-Pin(3+Tab) TO-220 Tube
ON Semiconductor
TIP117G
2 mA
TO-220-3
2 W
2 A
TO-220
1000 hFE
2.5 V
Through Hole
100 V
150 °C
-65 °C
PNP - Darlington
TO-220-3
ON Semiconductor
TIP116G
2 mA
TO-220-3
2 W
2 A
TO-220
1000 hFE
2.5 V
Through Hole
80 V
150 °C
-65 °C
PNP - Darlington
INFINFIPAN60R360PFD7SXKSA1
ON Semiconductor
TIP116
2 mA
TO-220-3
50 W
2 A
TO-220-3
1000 hFE
2.5 V
Through Hole
80 V
150 °C
-65 °C
PNP - Darlington
25 MHz
TO-220-3
ON Semiconductor
TIP110
2 mA
TO-220-3
2 W
2 A
TO-220
1000 hFE
60 V
2.5 V
Through Hole
150 °C
-65 °C
onsemi-FJP5027OTU GP BJT Trans GP BJT NPN 800V 3A 50000mW 3-Pin(3+Tab) TO-220 Tube
ON Semiconductor
TIP111G
2 mA
TO-220-3
2 W
2 A
TO-220
1000 hFE
2.5 V
Through Hole
80 V
150 °C
-65 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1746$ 0.21
1746$ 0.21

Description

General part information

TIP110%20(LEGACY%20FAIRCHILD) Series

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary devices.Replacement Active Part Number:TIP110