Discrete Semiconductor Products
TIP116G
ObsoleteON Semiconductor
MEDIUM POWER NPN DARLINGTON BIPOLAR POWER TRANSISTOR
Discrete Semiconductor Products
TIP116G
ObsoleteON Semiconductor
MEDIUM POWER NPN DARLINGTON BIPOLAR POWER TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | TIP116G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 2 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 2 W |
| Supplier Device Package | TO-220 |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.53 | |
| 9754 | $ 0.53 | |||
Description
General part information
TIP116G
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary devices.
Documents
Technical documentation and resources