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onsemi-FJP5027OTU GP BJT Trans GP BJT NPN 800V 3A 50000mW 3-Pin(3+Tab) TO-220 Tube
Discrete Semiconductor Products

TIP112G

Active
ON Semiconductor

TRANS DARLINGTON NPN 100V 2A 2000MW 3-PIN(3+TAB) TO-220AB TUBE

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Search across all available documentation for this part.

DocumentsDatasheetPackage Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P+1
onsemi-FJP5027OTU GP BJT Trans GP BJT NPN 800V 3A 50000mW 3-Pin(3+Tab) TO-220 Tube
Discrete Semiconductor Products

TIP112G

Active
ON Semiconductor

TRANS DARLINGTON NPN 100V 2A 2000MW 3-PIN(3+TAB) TO-220AB TUBE

Deep-Dive with AI

DocumentsDatasheetPackage Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P+1

Technical Specifications

Parameters and characteristics for this part

SpecificationTIP112G
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]1000
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power - Max [Max]2 W
Supplier Device PackageTO-220
Vce Saturation (Max) @ Ib, Ic2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 50$ 0.72
100$ 0.62
DigikeyN/A 545$ 1.55
650$ 1.55
Tube 1$ 1.56
10$ 0.99
100$ 0.66
500$ 0.52
1000$ 0.47
2000$ 0.43
5000$ 0.39
10000$ 0.37
ON SemiconductorN/A 1$ 0.39

Description

General part information

TIP112G

High DC Current Gain -hFE = 2500 (typ) @ Ic = 1.0 Adc

Collector-Emitter Sustaining Voltage @ 30 mAVCEO(sus)= 100 Vdc (Min)

Low Collector-Emitter Saturation VoltageVCE(sat)= 2.5 Vdc(Max) @ IC= 2.0 Adc