Specification	LND150K1-G

Current - Continuous Drain (Id) @ 25°C	13 mA
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	0 V
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	10 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	360 mW
Rds On (Max) @ Id, Vgs [Max]	1000 Ohm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

LND150 Series

N-Channel Depletion-Mode DMOS FET

Part	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	FET Feature	Package / Case	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Microchip Technology LND150N3-G-P003	Through Hole	740 mW	1000 Ohm	MOSFET (Metal Oxide)	N-Channel	30 mA	Depletion Mode	TO-226-3 TO-92-3	20 V	TO-92-3	10 pF	-55 °C	150 °C	500 V
Microchip Technology LND150K1-G	Surface Mount	360 mW	1000 Ohm	MOSFET (Metal Oxide)	N-Channel	13 mA	Depletion Mode	SC-59 SOT-23-3 TO-236-3	20 V	SOT-23-3	10 pF	-55 °C	150 °C	500 V
Microchip Technology LND150N3-G	Through Hole	740 mW	1000 Ohm	MOSFET (Metal Oxide)	N-Channel	30 mA	Depletion Mode	TO-226-3 TO-92-3	20 V	TO-92-3	10 pF	-55 °C	150 °C	500 V
Microchip Technology LND150N3-G-P013	Through Hole	740 mW	1000 Ohm	MOSFET (Metal Oxide)	N-Channel	30 mA	Depletion Mode	TO-226-3 TO-92-3	20 V	TO-92-3	10 pF	-55 °C	150 °C	500 V
Microchip Technology LND150N3-G-P002	Through Hole	740 mW	1000 Ohm	MOSFET (Metal Oxide)	N-Channel	30 mA	Depletion Mode	TO-226-3 TO-92-3	20 V	TO-92-3	10 pF	-55 °C	150 °C	500 V
Microchip Technology LND150N3-G-P014	Through Hole	740 mW	1000 Ohm	MOSFET (Metal Oxide)	N-Channel	30 mA	Depletion Mode	TO-226-3 TO-92-3	20 V	TO-92-3	10 pF	-55 °C	150 °C	500 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.50
		25	$ 0.42
		100	$ 0.37
	Digi-Reel®	1	$ 0.50
		25	$ 0.42
		100	$ 0.37
	Tape & Reel (TR)	3000	$ 0.37
Microchip Direct	T/R	1	$ 0.50
		25	$ 0.42
		100	$ 0.37
		1000	$ 0.36
Newark	Each (Supplied on Cut Tape)	1	$ 0.52
		10	$ 0.48
		25	$ 0.44
		50	$ 0.41

Description

General part information

LND150 Series

The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected.

The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.

Documents

Technical documentation and resources

LND150K1-G

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LND150K1-G

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Technical Specifications

LND150 Series

Pricing

Description

LND150 Series

Documents

LND1 Series: Constant Current Sources and Depletion-Mode FETs

LND150: ±500 Volt Protection Circuit

Understanding MOSFET Data

LND1 Series: High Voltage Ramp Generator

LND150 Datasheet - N-Channel Depletion-Mode DMOS FET

LND150: Off-Line Compact Universal Linear Regulator

Product Change Notice EN

Datasheet

LND150 Series