TO-92-3(StandardBody),TO-226_straightlead

Discrete Semiconductor Products

LND150N3-G

Active

Microchip Technology

POWER MOSFET, N CHANNEL, 500 V, 30 MA, 850 OHM, TO-92, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsDatasheet Product Change Notice EN +1

Discrete Semiconductor Products

LND150N3-G

Active

Microchip Technology

POWER MOSFET, N CHANNEL, 500 V, 30 MA, 850 OHM, TO-92, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	LND150N3-G

Current - Continuous Drain (Id) @ 25°C	30 mA
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	0 V
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	10 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	740 mW
Rds On (Max) @ Id, Vgs [Max]	1000 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

LND150 Series

N-Channel Depletion-Mode DMOS FET

Part	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	FET Feature	Package / Case	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Microchip Technology LND150N3-G-P003	Through Hole	740 mW	1000 Ohm	MOSFET (Metal Oxide)	N-Channel	30 mA	Depletion Mode	TO-226-3 TO-92-3	20 V	TO-92-3	10 pF	-55 °C	150 °C	500 V
Microchip Technology LND150K1-G	Surface Mount	360 mW	1000 Ohm	MOSFET (Metal Oxide)	N-Channel	13 mA	Depletion Mode	SC-59 SOT-23-3 TO-236-3	20 V	SOT-23-3	10 pF	-55 °C	150 °C	500 V
Microchip Technology LND150N3-G	Through Hole	740 mW	1000 Ohm	MOSFET (Metal Oxide)	N-Channel	30 mA	Depletion Mode	TO-226-3 TO-92-3	20 V	TO-92-3	10 pF	-55 °C	150 °C	500 V
Microchip Technology LND150N3-G-P013	Through Hole	740 mW	1000 Ohm	MOSFET (Metal Oxide)	N-Channel	30 mA	Depletion Mode	TO-226-3 TO-92-3	20 V	TO-92-3	10 pF	-55 °C	150 °C	500 V
Microchip Technology LND150N3-G-P002	Through Hole	740 mW	1000 Ohm	MOSFET (Metal Oxide)	N-Channel	30 mA	Depletion Mode	TO-226-3 TO-92-3	20 V	TO-92-3	10 pF	-55 °C	150 °C	500 V
Microchip Technology LND150N3-G-P014	Through Hole	740 mW	1000 Ohm	MOSFET (Metal Oxide)	N-Channel	30 mA	Depletion Mode	TO-226-3 TO-92-3	20 V	TO-92-3	10 pF	-55 °C	150 °C	500 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bag	1	$ 0.60
		25	$ 0.52
		100	$ 0.46

Description

General part information

LND150 Series

The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected.

The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.

Documents

Technical documentation and resources

Datasheet

Product Change Notice EN

Datasheet

Technical Data Sheet EN

Datasheet