
Catalog
N-Channel Depletion-Mode DMOS FET
Key Features
• + Free from secondary breakdown
• + Low power drive requirement
• + Ease of paralleling
• + Excellent thermal stability
• + Integral source-drain diode
• + High input impedance and low CISS
• + ESD gate protection
Description
AI
The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected.
The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.