Specification	APT30M19JVR

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	975 nC
Input Capacitance (Ciss) (Max) @ Vds	21600 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	700 W
Rds On (Max) @ Id, Vgs [Max]	19 mOhm
Supplier Device Package	ISOTOP®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

MOSFET-300V Series

300V MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
Microchip Technology APT30M36JLL	115 nC	SOT-227-4 miniBLOC	ISOTOP®	300 V	N-Channel	5 V	76 A	36 mOhm	Chassis Mount	6480 pF	MOSFET (Metal Oxide)
Microchip Technology APT30M19JVFR	975 nC	SOT-227-4 miniBLOC	ISOTOP®	300 V	N-Channel	4 V	130 A	19 mOhm	Chassis Mount		MOSFET (Metal Oxide)	10 V	30 V	-55 °C	150 °C	700 W	21600 pF
Microchip Technology APT30M70BVRG		TO-247-3	TO-247 [B]	300 V	N-Channel		48 A		Through Hole		MOSFET (Metal Oxide)	10 V	30 V	-55 °C	150 °C	370 W	5870 pF	70 mOhm	225 nC
Microchip Technology APT30M30JLL		SOT-227-4 miniBLOC	ISOTOP®	300 V	N-Channel	5 V	88 A		Chassis Mount		MOSFET (Metal Oxide)						7030 pF		140 nC
Microchip Technology APT30M40JVR	425 nC	SOT-227-4 miniBLOC	ISOTOP®	300 V	N-Channel	4 V	70 A		Chassis Mount		MOSFET (Metal Oxide)	10 V	30 V	-55 °C	150 °C		10200 pF	40 mOhm		450 W
Microchip Technology APT30M61SLLG/TR		D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	D3PAK	300 V	N-Channel		54 A		Surface Mount		MOSFET (Metal Oxide)	10 V	30 V	-55 °C	150 °C		3720 pF	61 mOhm	64 nC	403 W
Microchip Technology APT30M85BVRG		TO-247-3	TO-247 [B]	300 V	N-Channel			85 mOhm	Through Hole	4950 pF	MOSFET (Metal Oxide)	10 V	30 V	-55 °C	150 °C	300 W			195 nC
Microchip Technology APT30M19JVR	975 nC	SOT-227-4 miniBLOC	ISOTOP®	300 V	N-Channel	4 V	130 A	19 mOhm	Chassis Mount		MOSFET (Metal Oxide)	10 V	30 V	-55 °C	150 °C	700 W	21600 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	10	$ 74.51
Microchip Direct	TUBE	1	$ 74.51
		100	$ 64.34
		250	$ 61.93
		500	$ 60.46
		1000	$ 59.02
		5000	$ 57.09
Newark	Each	1	$ 74.51
		100	$ 64.34
		250	$ 61.93
		500	$ 60.46

Description

General part information

MOSFET-300V Series

Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement

mode power MOSFETS. Both conduction and switching losses are addressed with

Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines

Documents

Technical documentation and resources

APT30M19JVR

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APT30M19JVR

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Technical Specifications

MOSFET-300V Series

Pricing

Description

MOSFET-300V Series

Documents

Product Change Notice EN

High-Voltage Power Discretes and Modules

APT30M36B2LLG, APT30M36LLLG MOSFET MOS7 300 V 36 mOhm TO-247 MAX Datasheet

APT30M19JVR MOSFET MOS5 300 V 19 mOhm SOT-227 Datasheet

APT30M40JVR MOSFET MOS5 300 V 40 mOhm SOT-227 Datasheet

APT30M30JLL MOSFET MOS7 300 V 30 mOhm SOT-227 Datasheet

APT30M36JLL MOSFET MOS7 300 V 36 mOhm SOT-227 Datasheet

APT30M61BLLG, APT30M61SLLG MOSFET MOS7 300 V 61 mOhm TO-247 Datasheet

MOSFET-300V Series