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SOT-227-4, miniBLOC
Discrete Semiconductor Products

APT30M19JVFR

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Microchip Technology

TRANS MOSFET N-CH 300V 130A 4-PIN SOT-227

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SOT-227-4, miniBLOC
Discrete Semiconductor Products

APT30M19JVFR

Active
Microchip Technology

TRANS MOSFET N-CH 300V 130A 4-PIN SOT-227

Technical Specifications

Parameters and characteristics for this part

SpecificationAPT30M19JVFR
Current - Continuous Drain (Id) @ 25°C130 A
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs975 nC
Input Capacitance (Ciss) (Max) @ Vds21600 pF
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-227-4, miniBLOC
Power Dissipation (Max) [Max]700 W
Rds On (Max) @ Id, Vgs [Max]19 mOhm
Supplier Device PackageISOTOP®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 10$ 84.50
Microchip DirectTUBE 1$ 84.50
100$ 72.97
250$ 70.23
500$ 68.59
1000$ 66.94
5000$ 64.74

Description

General part information

MOSFET-300V Series

Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement

mode power MOSFETS. Both conduction and switching losses are addressed with

Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines